少妇无码一区二区三区四区_亚洲国产精品高清在线_朝韩女人与黑人牲交交_一女多男的共妻肉辣文快穿

CN EN
Home
About Us
Newpros
1200V 80 mΩ SIC MOSFET
1200V 80 mΩ SIC MOSFET Back
 PDF

Introduction 1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.
Features 1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.
SPECIFICATION

YJD212080NCFG1

Related new products

IGBT Fast Series

ESD Products for Panel Ports

IGBT Micro Trench Discrete for PV/Eenergy Storage/ EV Charger Application

High current patch rectifier bridge

P 40V Trench MOSFET for Load Switch Application

NP – sealed MOSFET for cooling fan

650V Super Junction N-Channel MOSFET

1200V 40mΩ SiC MOSFET

YBS2G Gulling Patch Rectifier Bridge

SOD-323FL Schottky